采用增益增强技术的65纳米CMOS 190 ghz放大器

2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI:10.1109/MWSYM.2014.6848290

Di-Sheng Siao, Jui-Chih Kao, Yuan-Hung Hsiao, Yao-Wen Hsu, Yu-Ming Teng, G. Huang, Kun-You Lin, Huei Wang

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引用次数: 10

摘要

本文介绍了一种基于级联码拓扑的190ghz 3级CMOS放大器，该放大器采用65nm标准RF CMOS 1P9M技术。为了利用CMOS工艺设计g波段的高增益放大器，本文采用增益增强技术来提高其最大稳定增益(MSG)性能。实验结果表明，该芯片在190 GHz时的峰值增益为16.3 dB，在188 ~ 192 GHz范围内的带宽为3 dB，芯片的核心面积为0.29 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 190-GHz amplifier with gain-boosting technique in 65-nm CMOS

This paper demonstrates a 190-GHz, 3 stages CMOS amplifier based on cascode topology using 65-nm standard RF CMOS 1P9M technology. To design a high gain amplifier at G-band using CMOS process, the gain-boosting technique is adopted to enhance the maximum stable gain (MSG) performance in this work. Based on the experimental results, the peak gain is 16.3 dB at 190 GHz, with 3-dB bandwidth from 188 to 192 GHz, and the core area of chip size is 0.29 mm2.

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2014 IEEE MTT-S International Microwave Symposium (IMS2014)

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