血浆诱导真菌细胞壁组分破坏的反应性分子动力学模拟

Lei Shi, T. Zhao, Yuantao Zhang, L. Zou, Li Zhang
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引用次数: 0

摘要

低温大气压等离子体在生物医学上的应用备受关注,其中的活性物质已被证明具有重要意义。然而,迄今为止,对活性物质与生物组分相互作用机理的基础研究还很少。在原子级别上进行模拟对于更好地了解这些过程可能是有效的。本文引入反应分子动力学模拟方法,模拟重要的活性氧OH、O2和O与真菌甲壳素的相互作用,以便更好地了解等离子体灭菌。发现在上述活性氧中,OH自由基和O原子可以破坏几丁质的重要键(即C-O, C-N, C-C),从而导致真菌细胞壁的破坏。在该过程中检测到的所有键裂解都是由甲壳素的吸氢反应引起的。此外,OH自由基可以相互反应,降低对结构的破坏效率。还应该提到的是,在O2分子的情况下没有观察到键断裂事件,O2分子与甲壳素只有弱的吸引非键相互作用。仿真结果与相关实验结论吻合较好。本研究可为在原子水平上对真菌几丁质结构进行不可逆破坏提供重要参考价值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reactive Molecular Dynamics Simulation on Plasma-induced Destruction of Fungal Cell Wall Components
Low-temperature atmospheric pressure plasmas are causing great attention for biomedical applications, the reactive species of which have been proven to be of great importance. However, there is very little basic research on the interaction mechanisms between the reactive species and biological components up to now. Simulating at the atomic level may be effective for acquiring a better insight in these processes. In this paper, reactive molecular dynamics simulations method is introduced to model the interaction of important reactive oxygen species, such as OH, O2 and O, with fungal chitin for a better understanding of plasma sterilization. It is found that among the reactive oxygen species mentioned above, OH radical and O atom can fracture important bonds of chitin (i.e., C-O, C-N, C-C), which subsequently results in the destruction of the fungal cell wall. All bond cleavages detected in the processes are initiated by a hydrogen-abstraction reaction from the chitin. Moreover, the OH radicals can react with each other and reduce the damage efficiency to the structure. It should also be mentioned that there is no bond cleavage events observed in the case of O2 molecules, which have only weak attractive non-bond interactions with the chitin. The simulation results are in good agreement with relevant experimental conclusions. This study can provide an important reference value for nonreversible destruction of the fungal chitin structure at the atomic level.
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