采用0.18µm BiCMOS技术设计宽带次谐波接收机前端

Ping-Yi Wang, Te-Lin Wu, Min-Chih Chou, Ming-Yu Chen, Yin-Cheng Chang, D. Chang, S. Hsu
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引用次数: 1

摘要

演示了一种低功率次谐波接收机前端,其射频频率范围为18-21GHz,转换中频范围为50- 1550mhz。低噪声放大器输入端基于变压器的电感耦合谐振器可有效地提供宽带信号变换和阻抗匹配。此外,LNA和混频器采用了几种电路技术,如GM增强和3d电感器,以实现高电路性能。该接收机采用0.18 μm SiGe BiCMOS技术制造,总功耗为60 mW。测量结果表明,该转换增益为36 dB,具有良好的增益平坦度(±1dB),中频带宽可达1.5 GHz,噪声系数低于8.5 dB,中频输出P1dB压缩点高于3 dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of wideband sub-harmonic receiver front-end using 0.18-µm BiCMOS technology
A low-power sub-harmonic receiver front-end covering an RF frequency range of 18-21GHz with a converted IF range of 50-1550 MHz is demonstrated. The transformer-based inductive coupled resonators at the input of low-noise amplifier provide a wideband signal transformation and impedance matching effectively. Also, several circuit techniques such as GM boosted and 3D-inductors are employed for the LNA and mixer to achieve high circuit performance. The proposed receiver is fabricated using 0.18-μm SiGe BiCMOS technology with a total power consumption of 60 mW. Measured results show that the conversion gain is of 36 dB featuring an excellent gain flatness (±1dB) with the IF bandwidth up to 1.5 GHz, noise figure lower than 8.5 dB, and output P1dB compression point higher than 3 dBm for the IF frequency, respectively.
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