{"title":"液滴外延形成砷化镓纳米晶的蒙特卡罗模拟","authors":"M. Vasilenko, N. Shwartz","doi":"10.1109/EDM.2016.7538678","DOIUrl":null,"url":null,"abstract":"Simulation of GaAs nanorings formation by droplet epitaxy was carried out using a kinetic lattice Monte Carlo model. Dependence of nanoring morphology on growth temperature, arsenic flux intensity and gallium drop surface density was demonstrated. The formation conditions for single, double and triple concentric rings were analyzed.","PeriodicalId":353623,"journal":{"name":"2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"166 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monte Carlo simulation of GaAs nanorings formation by droplet epitaxy\",\"authors\":\"M. Vasilenko, N. Shwartz\",\"doi\":\"10.1109/EDM.2016.7538678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Simulation of GaAs nanorings formation by droplet epitaxy was carried out using a kinetic lattice Monte Carlo model. Dependence of nanoring morphology on growth temperature, arsenic flux intensity and gallium drop surface density was demonstrated. The formation conditions for single, double and triple concentric rings were analyzed.\",\"PeriodicalId\":353623,\"journal\":{\"name\":\"2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)\",\"volume\":\"166 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDM.2016.7538678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2016.7538678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monte Carlo simulation of GaAs nanorings formation by droplet epitaxy
Simulation of GaAs nanorings formation by droplet epitaxy was carried out using a kinetic lattice Monte Carlo model. Dependence of nanoring morphology on growth temperature, arsenic flux intensity and gallium drop surface density was demonstrated. The formation conditions for single, double and triple concentric rings were analyzed.