p-GaN/ i-InGaN/n-GaN太阳能电池的模拟

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV) Pub Date : 2014-12-29 DOI:10.1109/NAWDMPV.2014.6997614

Chahrazed Boudaoud, A. Hamdoune, Z. Allam

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引用次数: 1

摘要

iii -氮化物材料体系为开发高效太阳能电池提供了巨大的潜力。InxGa1-xN合金体系的直接间隙从近红外波段的InN (0.7 eV)不断扩大到中紫外波段的GaN (3.4 eV)。本文利用SILVACO软件模拟了单太阳光照条件下InGaN太阳能电池的性能。

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Simulation of p-GaN/ i-InGaN/n-GaN solar cell

The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The direct gap of the InxGa1-xN alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.

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2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)

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