薄SQI NEMS加速度计兼容In-IC集成

2006 5th IEEE Conference on Sensors Pub Date : 2006-10-22 DOI:10.1109/ICSENS.2007.355716

E. Oilier, L. Duraffourg, M. Delaye, S. Deneuville, V. Nguyen, P. Andreucci, H. Grange, P. Robert, F. Marchi, R. Dianoux, T. Baron

{"title":"薄SQI NEMS加速度计兼容In-IC集成","authors":"E. Oilier, L. Duraffourg, M. Delaye, S. Deneuville, V. Nguyen, P. Andreucci, H. Grange, P. Robert, F. Marchi, R. Dianoux, T. Baron","doi":"10.1109/ICSENS.2007.355716","DOIUrl":null,"url":null,"abstract":"The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with \"In-IC\" integration. The goal of this work is to demonstrate the feasibility in terms of concept and technological manufacturing. Modeling of Casimir force, development of hybrid e-beam/DUV lithography and FH-vapor release, specific AFM characterizations have allowed to design, fabricate and characterize first devices.","PeriodicalId":233838,"journal":{"name":"2006 5th IEEE Conference on Sensors","volume":"23 9","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Thin SQI NEMS accelerometers compatible with In-IC integration\",\"authors\":\"E. Oilier, L. Duraffourg, M. Delaye, S. Deneuville, V. Nguyen, P. Andreucci, H. Grange, P. Robert, F. Marchi, R. Dianoux, T. Baron\",\"doi\":\"10.1109/ICSENS.2007.355716\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with \\\"In-IC\\\" integration. The goal of this work is to demonstrate the feasibility in terms of concept and technological manufacturing. Modeling of Casimir force, development of hybrid e-beam/DUV lithography and FH-vapor release, specific AFM characterizations have allowed to design, fabricate and characterize first devices.\",\"PeriodicalId\":233838,\"journal\":{\"name\":\"2006 5th IEEE Conference on Sensors\",\"volume\":\"23 9\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 5th IEEE Conference on Sensors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSENS.2007.355716\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 5th IEEE Conference on Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENS.2007.355716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文提出了一种基于薄SOI技术并兼容In-IC集成的加速度计用薄SOI NEMS结构。这项工作的目的是证明在概念和技术制造方面的可行性。卡西米尔力的建模，电子束/DUV混合光刻和fh蒸气释放的开发，特定的AFM表征使得设计，制造和表征第一个设备成为可能。

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Thin SQI NEMS accelerometers compatible with In-IC integration

The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with "In-IC" integration. The goal of this work is to demonstrate the feasibility in terms of concept and technological manufacturing. Modeling of Casimir force, development of hybrid e-beam/DUV lithography and FH-vapor release, specific AFM characterizations have allowed to design, fabricate and characterize first devices.

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2006 5th IEEE Conference on Sensors

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