CMOS技术和耐辐射设计的发展趋势

G. Anelli
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引用次数: 17

摘要

在过去的几十年中,CMOS技术经历了巨大的发展。每一代新技术都以不变的成本获得30%的性能改进。这种进步使流程迅速过时,迫使我们不断升级我们的设计。本文将简要介绍CMOS器件的工作原理。在简要概述了电离辐射和高能粒子对CMOS集成电路(IC)的影响之后,将讨论标度的影响。特别是,缩小一项技术的最小尺寸不仅可以提高MOS晶体管的最终性能,还可以改变CMOS ic的辐射响应。总剂量效应降低,但单事件效应可能增强。将讨论缩放对高能物理或医学应用电路设计的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Trends in CMOS technologies and radiation tolerant design
CMOS technologies have undergone a tremendous evolution in the past decades. With each new technology generation a 30% improvement in performance has been obtained at constant cost. This progress makes processes obsolete quickly forcing us to continuously upgrade our designs. A short reminder of the operation of CMOS devices will be presented. After a brief overview of the effects of ionizing radiation and highly energetic particles on CMOS integrated circuits (IC), the influence of scaling will be discussed. In particular, scaling down the minimum dimensions of a technology not only improves the ultimate performance of the MOS transistor, but also alters the radiation response of CMOS ICs. Total dose effects are reduced but single event effects may be enhanced. Aspects of the influence of scaling on the design of circuits for high energy physics or medical applications will be discussed.
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