SOI mosfet对低功率数字电路的影响

Proceedings of 1997 International Symposium on Low Power Electronics and Design Pub Date : 1997-08-01 DOI:10.1109/LPE.1997.621291

Y. Tseng, S. Chin, J. Woo

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引用次数: 1

摘要

受到基于SOI器件的研究成果的鼓舞，SOI上的CMOS最近被建议用于低功耗数字应用。本文研究了SOI器件特性对开关电路的关键影响，并比较了SOI器件和批量器件在电路应用中的相对优点。因此，讨论了浮体对SOI电路性能的影响以及相关的器件解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The impact of SOI MOSFETs on low power digital circuits

Encouraged by the promising results of SOI device-based studies, CMOS on SOI has recently been suggested for the low power digital applications. In this paper, the crucial effects of SOI device characteristics on switching circuits is investigated, and the relative merits of SOI and bulk devices for circuit applications are compared. As a result, the impact of the floating body on SOI circuit performance and the related device solutions are discussed.

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Proceedings of 1997 International Symposium on Low Power Electronics and Design

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