S. Kamaruddin, M. Z. Sahdan, Kah-Yoong Chan, H. Yow, Jian-Wei Hoon, M. Mahmood, H. Saim
{"title":"溶胶-凝胶浸泡法制备ZnO结构","authors":"S. Kamaruddin, M. Z. Sahdan, Kah-Yoong Chan, H. Yow, Jian-Wei Hoon, M. Mahmood, H. Saim","doi":"10.1109/SMELEC.2010.5549531","DOIUrl":null,"url":null,"abstract":"Zinc oxide (ZnO) is an emerging material in large area electronic applications such as thin-film solar cells and transistors. We report on the fabrication and characterization of ZnO nanostructures. ZnO nanostructures have been synthesized using sol-gel immerse technique on oxidized silicon substrates. Different precursor's concentrations ranging from 0.0001 M to 0.01 M (M=molarity) using zinc nitrate hexahydrate [Zn(NO3)2.6H2O] and hexamethylenetetramine [C6H12N4] were employed in the synthesis of the ZnO nanostructures. The surface morphologies were examined using scanning electron microscope (SEM) and the structural properties were measured using X-ray diffractometer (XRD). In order to investigate the optical properties, the ZnO nanostructures were measured using ultraviolet-visible (UV-Vis) spectroscopy. The electrical properties of the ZnO nanostructures were characterized using current-voltage (I-V) measurement system.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Microfabrication of ZnO structures using sol-gel immerse technique\",\"authors\":\"S. Kamaruddin, M. Z. Sahdan, Kah-Yoong Chan, H. Yow, Jian-Wei Hoon, M. Mahmood, H. Saim\",\"doi\":\"10.1109/SMELEC.2010.5549531\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Zinc oxide (ZnO) is an emerging material in large area electronic applications such as thin-film solar cells and transistors. We report on the fabrication and characterization of ZnO nanostructures. ZnO nanostructures have been synthesized using sol-gel immerse technique on oxidized silicon substrates. Different precursor's concentrations ranging from 0.0001 M to 0.01 M (M=molarity) using zinc nitrate hexahydrate [Zn(NO3)2.6H2O] and hexamethylenetetramine [C6H12N4] were employed in the synthesis of the ZnO nanostructures. The surface morphologies were examined using scanning electron microscope (SEM) and the structural properties were measured using X-ray diffractometer (XRD). In order to investigate the optical properties, the ZnO nanostructures were measured using ultraviolet-visible (UV-Vis) spectroscopy. The electrical properties of the ZnO nanostructures were characterized using current-voltage (I-V) measurement system.\",\"PeriodicalId\":308501,\"journal\":{\"name\":\"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2010.5549531\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2010.5549531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
氧化锌(ZnO)是一种应用于薄膜太阳能电池和晶体管等大面积电子领域的新兴材料。我们报道了氧化锌纳米结构的制备和表征。采用溶胶-凝胶浸渍技术在氧化硅衬底上合成了ZnO纳米结构。以六水合硝酸锌[Zn(NO3)2.6H2O]和六亚甲基四胺[C6H12N4]为原料,采用浓度为0.0001 M ~ 0.01 M (M=摩尔浓度)的前驱体制备ZnO纳米结构。用扫描电子显微镜(SEM)观察了表面形貌,并用x射线衍射仪(XRD)测量了结构性能。为了研究ZnO的光学性质,采用紫外-可见(UV-Vis)光谱对ZnO的纳米结构进行了测量。采用电流-电压(I-V)测量系统对ZnO纳米结构的电学性能进行了表征。
Microfabrication of ZnO structures using sol-gel immerse technique
Zinc oxide (ZnO) is an emerging material in large area electronic applications such as thin-film solar cells and transistors. We report on the fabrication and characterization of ZnO nanostructures. ZnO nanostructures have been synthesized using sol-gel immerse technique on oxidized silicon substrates. Different precursor's concentrations ranging from 0.0001 M to 0.01 M (M=molarity) using zinc nitrate hexahydrate [Zn(NO3)2.6H2O] and hexamethylenetetramine [C6H12N4] were employed in the synthesis of the ZnO nanostructures. The surface morphologies were examined using scanning electron microscope (SEM) and the structural properties were measured using X-ray diffractometer (XRD). In order to investigate the optical properties, the ZnO nanostructures were measured using ultraviolet-visible (UV-Vis) spectroscopy. The electrical properties of the ZnO nanostructures were characterized using current-voltage (I-V) measurement system.