1.3μm InAs/InGaAs QD激光器稳定输出功率大于1.07 W

International Conference on Photonics and Optical Engineering and the Annual West China Photonics Conference Pub Date : 2019-01-24 DOI:10.1117/12.2521947

Fu-Hui Shao, Yi Zhang, X. Su, H. Hao, Ying-qiang Xu, H. Ni, Yu Zhang, Z. Niu

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引用次数: 0

摘要

本文报道了固体源分子束外延(MBE)生长高质量的InGaAs/ GaAs量子点(QD)结构。采用光刻、电感耦合等离子体(ICP)、等离子体增强化学气相沉积(PECVD)和反应离子刻蚀(RIE)等半导体工艺制备激光器件。刚性宽100μm，腔长2000um。提出了发射波长约为1.31μm的室温连续波工作原理。15°时阈值电流(Ith)和阈值电流密度(Jth)分别为0.3A和150A/cm2, Ith=7A时输出功率高达1.079W。我们还观察到，当注入电流从1.5A增加到3.5A时，光谱从1315nm移动到1333nm，移动速度为8.72 nm/A。

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1.3μm InAs/InGaAs QD laser steady output power over 1.07 W

Here we report the solid source molecular beam epitaxy (MBE) growth of high quality of InGaAs/ GaAs quantum dot (QD) structures. A laser device is fabricated by the semiconductor process, including Lithography, Inductively Coupled Plasma (ICP), Plasma Enhanced Chemical Vapor Deposition (PECVD) and Reactive Ion Etching (RIE). The rigid is 100μm wide and cavity is 2000um long. Room temperature continuous-wave (CW) operation with emission wavelength around 1.31μm is presented. Threshold current (Ith) and threshold current density (Jth) is 0.3A and 150A/cm2 at 15°, and output power at Ith=7A reached as high as 1.079W. We also observe that the spectrum shift from 1315nm to 1333nm when the injection currents increase from 1.5A to 3.5A, and the shift speed is 8.72 nm/A.

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International Conference on Photonics and Optical Engineering and the Annual West China Photonics Conference

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