采用负电荷氮化铝栅极电介质的高场效应迁移率非晶铟锡锌氧化物薄膜晶体管

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI:10.23919/AM-FPD.2018.8437384

Donggi Shin, K. Jang, Cam Phu Thi Nguyen, Heejun Park, Jeongsoo Kim, Youngkuk Kim, J. Yi

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引用次数: 2

摘要

本文报道了负电荷氮化铝(AlON)栅极电介质对非晶铟锡氧化锌(a-ITZO)薄膜晶体管(TFTs)电学性能的影响。使用AlON栅介质的a-ITZO TFT具有较高的场效应迁移率(μFE)，达到116.9 cm2N。S，高开/关电流比~108，低亚阈值摆幅0.11。我们的高a-ITZO tft $\mu_{\ mathm {FE}}$为116.9 cm2/V。S，通过氮退火控制固定电荷获得，适用于下一代高帧率和超高分辨率显示器的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High Field-Effect Mobility Amorphous Indium-Tin-Zinc-Oxide Thin-Film Transistors Using Negatively Charged Aluminium-Oxynitride Gate Dielectrics

We report the effects of negatively charged aluminium-oxynitride (AlON) gate dielectrics on the electrical properties of amorphous-indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs). The a-ITZO TFT using the AlON gate dielectric has high field-effect mobility (μFE) of 116.9 cm²N.s, high on/off current ratio of ~10⁸ and low sub-threshold swing of 0.11. Our high a-ITZO TFTs with $\mu_{\mathrm{FE}}$ of 116.9 cm²/V^.s, obtained through control of the fixed charges with nitrogen annealing was suitable for application of next-generation displays including high-frame-rate and ultra-high resolution displays.

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来源期刊

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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