GaN功率ic:回顾优势、差距与未来方向

2020 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2020-12-12 DOI:10.1109/IEDM13553.2020.9371918

O. Trescases, S. Murray, W. L. Jiang, M. S. Zaman

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引用次数: 16

摘要

本文回顾了用于功率集成电路的单片GaN集成，重点介绍了当前的技术能力。我们强调了将低压电路与功率器件集成以支持转换器运行的关键机会。imec 200 V GaN-on-SOI和安森美半导体650 V GaN-on-Si工艺的模拟和实验结果为数字和模拟电路提供了定量的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaN Power ICs: Reviewing Strengths, Gaps, and Future Directions

This paper reviews monolithic GaN integration for power ICs, focusing on current technological capabilities. We highlight key opportunities for integrating low-voltage circuits alongside power devices to support converter operation. Simulations and experimental results from the imec 200 V GaN-on-SOI and ON Semiconductor 650 V GaN-on-Si processes provide quantitative insights for digital and analog circuitry.

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2020 IEEE International Electron Devices Meeting (IEDM)

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