片上s参数测量中级联反嵌入方法的选择

S. Amakawa, K. Takano, K. Katayama, M. Motoyoshi, T. Yoshida, M. Fujishima
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引用次数: 9

摘要

仅通过级联反嵌入方法及其变体的性能进行了评估,这些方法使用Π-或t等效来表示和平分对称THRU。Π-和-based方法的结果在低频下是合理的。然而,当频率变高时,或者当THRU的长度接近有效波长λ时,它们会明显偏离正确的结果。在高频率下,一个更好的选择是TSD(过短延迟),当THRU是对称的时,它只需要THRU和LINE。TSD给出正确的结果,除了周期性出现的“死区”,只要已知line中传输线(TL)的特性阻抗Zχ。可以使用Π-based方法提取低频的Zχ,从中可以外推到更高的频率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On the choice of cascade de-embedding methods for on-wafer S-parameter measurement
Performance of thru-only cascade de-embedding methods and their variants that use a Π- or a T-equivalent to represent and bisect a symmetric THRU is assessed. The results from the Π- and T-based methods are reasonable at low frequencies. However they are shown to deviate noticeably from the correct results as the frequency gets high or, equivalently, when the length of the THRU approaches an effective wavelength λ. A better alternative at high frequencies is TSD (thru-short-delay), which, when THRU is symmetric, requires only THRU and LINE. TSD gives correct results except in the periodically appearing `dead zones', provided that the characteristic impedance, Zχ, of the transmission line (TL) in the LINE is known. A Π-based method could be used to extract Zχ at low frequencies, from which Zχ can be extrapolated to higher frequencies.
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