驱动互连负载系统中进程偏差下的传输延迟变化

K. G. Verma, B. Kaushik, R. Singh
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引用次数: 5

摘要

工艺变化已成为许多纳米电路设计的主要问题,包括互连管道。本文全面概述了驱动-互连-负载系统中过程变化的类型和来源。制造变化的主要来源包括沉积,化学机械平面化(CMP),蚀刻,分辨率增强技术(RET)。工艺变化表现为电路性能的不确定性,如延迟、噪声和功耗。本文讨论了在130nm、70nm和45nm三种不同工艺下,这些工艺变化对电路延迟的影响。这三种技术之间的结果比较表明,随着器件尺寸的缩小,工艺变化成为一个主要因素,随后增加了延迟的不确定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Propagation Delay Variations under Process Deviation in Driver Interconnect Load System
Process variation has become a major concern in the design of many nanometer circuits, including interconnect pipelines. This paper provides a comprehensive overview of the types and sources of all aspects of process variations in driver –interconnect-load system. The primary sources of manufacturing variation include Deposition, Chemical Mechanical Planarization (CMP), Etching, Resolution Enhancement Technology (RET). Process variations manifest themselves as the uncertainties of circuit performance, such as delay, noise and power consumption. The impacts of these process variations on circuit delay are discussed in this paper for three different technologies i.e 130nm, 70nm and 45nm. The comparison of results between these three technologies shows that as device size shrinks the process variation becomes a dominant factor and subsequently increases the uncertainty of the delays.
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