PEPC复合物中的电荷输运机制

Proceedings of the IEEE Symposium on Emerging Technologies, 2005. Pub Date : 2005-12-19 DOI:10.1109/ICET.2005.1558901

S. A. Moiz, M.M. Ahmed, K. Karimov

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引用次数: 0

摘要

本文研究了掺杂蒽(An)的聚n -环氧丙基咔唑(PEPC)薄膜的电流-电压(1- V)特性。在室温下，在277g的离心机上，在镍(Ni)衬底上生长pepc薄膜。然后将I-V特性作为温度范围从30℃到60℃的函数进行评估。该器件具有可逆整流特性，其电流大小随温度的升高而增大。这已被解释为温度依赖的跳跃过程中载流子在有机薄膜具有位置和能量紊乱。然而，研究表明，所制备器件的非线性i - v特性遵循空间电荷限制电流(SCLC)模型。将相关高斯无序移动模型应用到实验SCLC中，计算了能量无序参数和跳跃点间的平均间距。研究表明，pepccomplex的能量无序程度和平均位点间距离相对较高，这可能是由于整体迁移造成的。术语:高斯无序模型，有机半导体，温度相关特性，空穴迁移率。

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Charge transport mechanism in PEPC complex

In thisstudycurrent-voltage (1- V) characteristics of thin films of poly-N- epoxipropylcarbazole (PEPC)dopedwithAnthracene (An)havebeeninvestigated. ThePEPCfilms were grownonNickel (Ni) substrates, atroomtemperature, byusing acentrifugal machine operated at277g.I-V characteristics werethenevaluated asa function of temperature ranging from30to60'C.Reversible rectifying characteristics wereexhibited bythedevices inwhichthemagnitude ofcurrentincreases with increasing valuesoftemperature. Thishasbeen explained withtemperature dependent hopping process offreecarriers intheorganic films having positional aswellasenergetic disorders. Whereas ithas beenshownthatthenonlinear I-Vcharacteristics of thefabricated devices follow SpaceChargeLimited Current (SCLC)model. By applying thecorrelated Gaussian disorder mobilitv modeltotheexperimental SCLC,theenergetic disorder parameter andaverage intersite spacing between hopping locations havebeen calculated. It has beendemonstrated thatthe magnitude ofenergetic disorderness and average intersite distance inPEPCcomplex isrelatively higher whichcould beacause oflowholemobility. Indcex Tterms-Gaussian disorder model,organic semiconductors, temperature dependent charactcristics, holemobility.

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Proceedings of the IEEE Symposium on Emerging Technologies, 2005.

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