分栅闪存器件的特性:可靠性、栅极干扰和电容耦合系数

D.M. Kim, Y. Jun, Y. Sohn, J. Kim, I. Choi
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引用次数: 2

摘要

分栅闪存器件的特征。利用电流注入实验研究了由于累积电子隧穿即重复擦除引起的氧化物击穿。结果与观察到的器件循环行为相关。同时给出了栅极干扰、编程效率和电容耦合系数的数据并进行了讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of split-gate flash memory devices: reliability, gate-disturbance and capacitive coupling coefficients
The split-gate flash memory device is characterized. The oxide breakdown due to cumulative electron tunneling, viz. repeated erasure is investigated with the use of current injection experiments. The results are correlated with the observed device cycling behaviour. Also data for the gate disturbance, programming efficiency and capacitive coupling coefficients are presented and discussed.
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