脉冲激光/离子束处理Ge/Si和Ge/Al2O3薄膜结构

2013 International Conference on Advanced Optoelectronics and Lasers (CAOL 2013) Pub Date : 2013-11-07 DOI:10.1109/CAOL.2013.6657630

R. I. Batalov, R. Bayazitov, H. A. Novikov, V. Shustov, I. Faĭzrakhmanov, N. M. Lyadov, K. Galkin, P. Gaiduk, G. Ivlev, S. L. Prakopyeu

{"title":"脉冲激光/离子束处理Ge/Si和Ge/Al2O3薄膜结构","authors":"R. I. Batalov, R. Bayazitov, H. A. Novikov, V. Shustov, I. Faĭzrakhmanov, N. M. Lyadov, K. Galkin, P. Gaiduk, G. Ivlev, S. L. Prakopyeu","doi":"10.1109/CAOL.2013.6657630","DOIUrl":null,"url":null,"abstract":"Vacuum deposition of Ge thin films onto Si and Al2O3 substrates by magnetron and ion-beam assisted sputtering was studied. During deposition sputtering time and substrate temperature were varied. Nanosecond pulsed annealing of deposited Ge films by powerful laser or ion beams was performed. The dependence of structural and optical properties of Ge/Si and Ge/Al2O3 films on parameters of pulsed treatments was investigated. Optimum parameters for deposition and pulsed treatments resulted in light emitting layers are determined.","PeriodicalId":189618,"journal":{"name":"2013 International Conference on Advanced Optoelectronics and Lasers (CAOL 2013)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Pulsed laser/ion beam treatment of Ge/Si and Ge/Al2O3 thin film structures\",\"authors\":\"R. I. Batalov, R. Bayazitov, H. A. Novikov, V. Shustov, I. Faĭzrakhmanov, N. M. Lyadov, K. Galkin, P. Gaiduk, G. Ivlev, S. L. Prakopyeu\",\"doi\":\"10.1109/CAOL.2013.6657630\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vacuum deposition of Ge thin films onto Si and Al2O3 substrates by magnetron and ion-beam assisted sputtering was studied. During deposition sputtering time and substrate temperature were varied. Nanosecond pulsed annealing of deposited Ge films by powerful laser or ion beams was performed. The dependence of structural and optical properties of Ge/Si and Ge/Al2O3 films on parameters of pulsed treatments was investigated. Optimum parameters for deposition and pulsed treatments resulted in light emitting layers are determined.\",\"PeriodicalId\":189618,\"journal\":{\"name\":\"2013 International Conference on Advanced Optoelectronics and Lasers (CAOL 2013)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Advanced Optoelectronics and Lasers (CAOL 2013)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAOL.2013.6657630\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Advanced Optoelectronics and Lasers (CAOL 2013)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAOL.2013.6657630","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了磁控管和离子束辅助溅射在Si和Al2O3衬底上真空沉积Ge薄膜的方法。在沉积过程中，溅射时间和衬底温度发生了变化。采用强激光或离子束对沉积的锗薄膜进行了纳秒脉冲退火。研究了脉冲处理参数对Ge/Si和Ge/Al2O3薄膜结构和光学性能的影响。确定了沉积和脉冲处理产生发光层的最佳参数。

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Pulsed laser/ion beam treatment of Ge/Si and Ge/Al2O3 thin film structures

Vacuum deposition of Ge thin films onto Si and Al2O3 substrates by magnetron and ion-beam assisted sputtering was studied. During deposition sputtering time and substrate temperature were varied. Nanosecond pulsed annealing of deposited Ge films by powerful laser or ion beams was performed. The dependence of structural and optical properties of Ge/Si and Ge/Al2O3 films on parameters of pulsed treatments was investigated. Optimum parameters for deposition and pulsed treatments resulted in light emitting layers are determined.

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2013 International Conference on Advanced Optoelectronics and Lasers (CAOL 2013)

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