晶体管发射极开路关断方案在高压功率逆变器中的应用

Dan Y. Chen, J. Walden
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引用次数: 5

摘要

在高压逆变器实验中实现了晶体管发射极开路关断方案。采用这种关断方案,不仅大大提高了晶体管的关断速度,而且消除了反偏二次击穿现象。因此,相同的器件可以完全用于更高电压和更高频率的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Application of transistor emitter-open turn-off scheme to high voltage power inverters
Transistor emitter-open turn-off scheme has been implemented in an experimental operating high voltage power inverter. Using such a turn-off scheme, not only the transistor turn-off speed greatly increased but also the reverse-biased second breakdown phenomenon is eliminated. Therefore, the very same device can be fully utilized for higher voltage and higher frequency applications.
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