{"title":"晶体管发射极开路关断方案在高压功率逆变器中的应用","authors":"Dan Y. Chen, J. Walden","doi":"10.1109/PESC.1981.7083646","DOIUrl":null,"url":null,"abstract":"Transistor emitter-open turn-off scheme has been implemented in an experimental operating high voltage power inverter. Using such a turn-off scheme, not only the transistor turn-off speed greatly increased but also the reverse-biased second breakdown phenomenon is eliminated. Therefore, the very same device can be fully utilized for higher voltage and higher frequency applications.","PeriodicalId":165849,"journal":{"name":"1981 IEEE Power Electronics Specialists Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Application of transistor emitter-open turn-off scheme to high voltage power inverters\",\"authors\":\"Dan Y. Chen, J. Walden\",\"doi\":\"10.1109/PESC.1981.7083646\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transistor emitter-open turn-off scheme has been implemented in an experimental operating high voltage power inverter. Using such a turn-off scheme, not only the transistor turn-off speed greatly increased but also the reverse-biased second breakdown phenomenon is eliminated. Therefore, the very same device can be fully utilized for higher voltage and higher frequency applications.\",\"PeriodicalId\":165849,\"journal\":{\"name\":\"1981 IEEE Power Electronics Specialists Conference\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1981.7083646\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1981.7083646","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Application of transistor emitter-open turn-off scheme to high voltage power inverters
Transistor emitter-open turn-off scheme has been implemented in an experimental operating high voltage power inverter. Using such a turn-off scheme, not only the transistor turn-off speed greatly increased but also the reverse-biased second breakdown phenomenon is eliminated. Therefore, the very same device can be fully utilized for higher voltage and higher frequency applications.