单片30w连续AlGaAs/GaAs异质结双极晶体管，频率为3ghz

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567875

D. Hill, Hua-Quen Tserng, Tae Kim, M. Tutt

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引用次数: 6

摘要

我们已经制造了异质结双极晶体管，据我们所知，这些晶体管在GaAs微波功率器件中具有创纪录的工作电压和单芯片输出功率。一个总射极长度为720 /spl mu/m的器件在集电极偏置为20 V时，在3 GHz下实现了4 W的输出功率和62%的功率附加效率。该器件单片结合了16个单元电池，总射极长度为7.68 mm，在3ghz下实现了30w的连续波输出功率和55%的功率附加效率。

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Single-chip 30 W CW AlGaAs/GaAs heterojunction bipolar transistor at 3 GHz

We have fabricated heterojunction bipolar transistors that, to our knowledge, exhibit record operating voltage and single-chip output power for GaAs microwave power devices. A device with 720 /spl mu/m total emitter length achieved an output power of 4 W with 62% power-added efficiency at 3 GHz at a collector bias of 20 V. A device monolithically combining 16 unit cells, for a total emitter length of 7.68 mm, achieved a CW output power of 30 W with 55% power-added efficiency at 3 GHz.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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