各种漏极扩展MOS器件在ESD应力条件下的瞬态特性

2010 International SoC Design Conference Pub Date : 2010-11-01 DOI:10.1109/SOCDC.2010.5682922

M. Shrivastava, H. Gossner, M. Baghini, V. Rao

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引用次数: 3

摘要

本文介绍了各种纳米级漏极扩展MOS器件的ESD评价。研究了静电放电应力条件下形成的电流细丝的电流和时间演化。基于瞬态干涉映射研究，讨论了器件在空间电荷调制开始时的行为和电流灯丝的演变。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the Transient behavior of various drain extended MOS devices under the ESD stress condition

This paper presents ESD evaluation of various nanoscale drain extended MOS devices. Current and time evolution of current filaments formed under the ESD stress conditions are investigated. A complete picture of device's behavior at the onset of space charge modulation and the evolution of current filamentation is discussed based on Transient Interferometric mapping studies.

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2010 International SoC Design Conference

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