M. Ichihashi, H. Lhermet, E. Beigné, F. Rothan, M. Belleville, A. Amara
{"title":"一种65nm片上多模异步本地电源单元,用于实现细粒度分布式交换机的多功率域soc","authors":"M. Ichihashi, H. Lhermet, E. Beigné, F. Rothan, M. Belleville, A. Amara","doi":"10.1109/ASSCC.2009.5357187","DOIUrl":null,"url":null,"abstract":"This paper discusses a local power supply unit designed for fine grain dynamic voltage scaling (DVS) in a multi-power domain SoC. The proposed power supply unit is fully compatible with an I/O library and adaptable to various logic module power needs. It delivers the module operating voltage, from 1.2 V to 0.6 V, according to predefined operating power modes and is equipped with the module power gating. The designed circuit requires five-I/O-pad pitch area in a 65-nm technology. The first test chip demonstrates that the maximum power efficiency is over 87% and the measured current consumption in stand-by mode is only 19 nA regardless of the connected module.","PeriodicalId":263023,"journal":{"name":"2009 IEEE Asian Solid-State Circuits Conference","volume":"428 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 65-nm on-chip multi-mode asynchronous local power supply unit for multi-power domain SoCs achieving fine grain DVS\",\"authors\":\"M. Ichihashi, H. Lhermet, E. Beigné, F. Rothan, M. Belleville, A. Amara\",\"doi\":\"10.1109/ASSCC.2009.5357187\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses a local power supply unit designed for fine grain dynamic voltage scaling (DVS) in a multi-power domain SoC. The proposed power supply unit is fully compatible with an I/O library and adaptable to various logic module power needs. It delivers the module operating voltage, from 1.2 V to 0.6 V, according to predefined operating power modes and is equipped with the module power gating. The designed circuit requires five-I/O-pad pitch area in a 65-nm technology. The first test chip demonstrates that the maximum power efficiency is over 87% and the measured current consumption in stand-by mode is only 19 nA regardless of the connected module.\",\"PeriodicalId\":263023,\"journal\":{\"name\":\"2009 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"428 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2009.5357187\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2009.5357187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 65-nm on-chip multi-mode asynchronous local power supply unit for multi-power domain SoCs achieving fine grain DVS
This paper discusses a local power supply unit designed for fine grain dynamic voltage scaling (DVS) in a multi-power domain SoC. The proposed power supply unit is fully compatible with an I/O library and adaptable to various logic module power needs. It delivers the module operating voltage, from 1.2 V to 0.6 V, according to predefined operating power modes and is equipped with the module power gating. The designed circuit requires five-I/O-pad pitch area in a 65-nm technology. The first test chip demonstrates that the maximum power efficiency is over 87% and the measured current consumption in stand-by mode is only 19 nA regardless of the connected module.