{"title":"基于2.6 ~ 2.8 μm gasb的垂直腔面发射激光器的仿真与优化","authors":"L. Piskorski, M. Marciniak, J. Walczak","doi":"10.1109/NUSOD.2016.7547068","DOIUrl":null,"url":null,"abstract":"We present the simulation results of threshold operation of mid-infrared GaSb-based vertical-cavity surface-emitting lasers obtained with the use of comprehensive fully self-consistent optical-electrical-thermal-recombination numerical model. The results show that by a proper design of the active region it is possible to achieve the stable single-fundamental-mode low-threshold operation with emission wavelengths longer than those reported so far for similar devices.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation and optimization of 2.6–2.8 μm GaSb-based vertical-cavity surface-emitting lasers\",\"authors\":\"L. Piskorski, M. Marciniak, J. Walczak\",\"doi\":\"10.1109/NUSOD.2016.7547068\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the simulation results of threshold operation of mid-infrared GaSb-based vertical-cavity surface-emitting lasers obtained with the use of comprehensive fully self-consistent optical-electrical-thermal-recombination numerical model. The results show that by a proper design of the active region it is possible to achieve the stable single-fundamental-mode low-threshold operation with emission wavelengths longer than those reported so far for similar devices.\",\"PeriodicalId\":425705,\"journal\":{\"name\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2016.7547068\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2016.7547068","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation and optimization of 2.6–2.8 μm GaSb-based vertical-cavity surface-emitting lasers
We present the simulation results of threshold operation of mid-infrared GaSb-based vertical-cavity surface-emitting lasers obtained with the use of comprehensive fully self-consistent optical-electrical-thermal-recombination numerical model. The results show that by a proper design of the active region it is possible to achieve the stable single-fundamental-mode low-threshold operation with emission wavelengths longer than those reported so far for similar devices.