{"title":"用双极增益特性测量SPEG SOS mosfet的表面复合速度","authors":"P.B. Stevens, C. Patel, J. Kerr, C. Shaw","doi":"10.1109/ESSDERC.1997.194489","DOIUrl":null,"url":null,"abstract":"Parasitic lateral bipolar gain characterisations were perfonned on silicon on-insulator (SOl) nMOSFETs with body contacts. The material was .. solid phase epitaxial growth (SPEG) silicon-on-sapphire (SOS). The behaviour of the gain was found to be dominated by surface recombina tion with a surface recombination velocity of 3xlO\" cm S-I, in agreement with three-level charge pumping measurements. A simple DC electrical characterisation technique is proposed for measuring the surface recombination velocity associated with interface states in MOSFETs where the gate-controlled bipolar gain is dominated by surface .recombi nation.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Surface recombination velocity measurement in SPEG SOS MOSFETs by bipolar gain characterisation\",\"authors\":\"P.B. Stevens, C. Patel, J. Kerr, C. Shaw\",\"doi\":\"10.1109/ESSDERC.1997.194489\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Parasitic lateral bipolar gain characterisations were perfonned on silicon on-insulator (SOl) nMOSFETs with body contacts. The material was .. solid phase epitaxial growth (SPEG) silicon-on-sapphire (SOS). The behaviour of the gain was found to be dominated by surface recombina tion with a surface recombination velocity of 3xlO\\\" cm S-I, in agreement with three-level charge pumping measurements. A simple DC electrical characterisation technique is proposed for measuring the surface recombination velocity associated with interface states in MOSFETs where the gate-controlled bipolar gain is dominated by surface .recombi nation.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194489\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194489","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Surface recombination velocity measurement in SPEG SOS MOSFETs by bipolar gain characterisation
Parasitic lateral bipolar gain characterisations were perfonned on silicon on-insulator (SOl) nMOSFETs with body contacts. The material was .. solid phase epitaxial growth (SPEG) silicon-on-sapphire (SOS). The behaviour of the gain was found to be dominated by surface recombina tion with a surface recombination velocity of 3xlO" cm S-I, in agreement with three-level charge pumping measurements. A simple DC electrical characterisation technique is proposed for measuring the surface recombination velocity associated with interface states in MOSFETs where the gate-controlled bipolar gain is dominated by surface .recombi nation.
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