{"title":"焊接条件对锡包覆铜颗粒接头200℃抗剪强度的影响","authors":"H. Nishikawa, Xiangdong Liu, Siliang He","doi":"10.23919/EMPC.2017.8346890","DOIUrl":null,"url":null,"abstract":"As a recent trend, the silicon carbide (SiC) is of particular interest for semiconductor device. The SiC power device provides the possibility to develop the next-generation power conversion circuit with high efficiency and high power density. Compared with the conventional silicon (Si) device, the SiC device can operate with significant lower power loss and higher operating temperature, which contributes to miniaturization and higher performance of power modules. To assemble these power modules, the high temperature packaging technology such as die attach process is needed. As a die attach process, we focus on a solid-state bonding, which can be operated at a low temperatures. However, some drawbacks of this technology still remain. For example, the duration of this process is too long, up to a few hours, and multiple hours of annealing are required to achieve a thermodynamically stable joint. So we are studying on a solid-state bonding using Sn-coated Cu particles to reduce the bonding time. In this study, we evaluated the effect of bonding conditions on the shear strength of Cu/Cu joints at 200 t using a Sn-coated Cu particle paste and investigated a high temperature reliability of the joints. As a result, the average shear strength of Cu/Cu joints under a formic acid atmosphere was around 25 MPa at a bonding time of 20 min. Then, the joints had nearly 20MP shear strength after the isothermal aging at 250 t for 1000 h.","PeriodicalId":329807,"journal":{"name":"2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition","volume":"250 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of bonding conditions on shear strength of joints at 200 °C using Sn-coated Cu particle\",\"authors\":\"H. Nishikawa, Xiangdong Liu, Siliang He\",\"doi\":\"10.23919/EMPC.2017.8346890\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As a recent trend, the silicon carbide (SiC) is of particular interest for semiconductor device. The SiC power device provides the possibility to develop the next-generation power conversion circuit with high efficiency and high power density. Compared with the conventional silicon (Si) device, the SiC device can operate with significant lower power loss and higher operating temperature, which contributes to miniaturization and higher performance of power modules. To assemble these power modules, the high temperature packaging technology such as die attach process is needed. As a die attach process, we focus on a solid-state bonding, which can be operated at a low temperatures. However, some drawbacks of this technology still remain. For example, the duration of this process is too long, up to a few hours, and multiple hours of annealing are required to achieve a thermodynamically stable joint. So we are studying on a solid-state bonding using Sn-coated Cu particles to reduce the bonding time. In this study, we evaluated the effect of bonding conditions on the shear strength of Cu/Cu joints at 200 t using a Sn-coated Cu particle paste and investigated a high temperature reliability of the joints. As a result, the average shear strength of Cu/Cu joints under a formic acid atmosphere was around 25 MPa at a bonding time of 20 min. Then, the joints had nearly 20MP shear strength after the isothermal aging at 250 t for 1000 h.\",\"PeriodicalId\":329807,\"journal\":{\"name\":\"2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition\",\"volume\":\"250 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EMPC.2017.8346890\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EMPC.2017.8346890","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
碳化硅(SiC)作为一种新趋势,在半导体器件中受到广泛关注。SiC功率器件为开发高效率、高功率密度的下一代功率转换电路提供了可能。与传统的硅(Si)器件相比,SiC器件具有更低的功耗和更高的工作温度,有助于功率模块的小型化和更高的性能。为了组装这些电源模块,需要采用贴片工艺等高温封装技术。作为一种模具贴附工艺,我们关注的是一种可以在低温下操作的固态键合。然而,这项技术的一些缺点仍然存在。例如,这一过程的持续时间太长,长达几个小时,并且需要多个小时的退火才能获得热力学稳定的接头。因此,我们正在研究一种利用锡包覆铜颗粒来缩短键合时间的固态键合方法。在本研究中,我们使用锡包覆铜颗粒膏评估了连接条件对200 t Cu/Cu接头抗剪强度的影响,并研究了接头的高温可靠性。结果表明,甲酸气氛下Cu/Cu接头在连接时间为20 min时的平均抗剪强度约为25 MPa,在250 t等温时效1000 h后,接头的抗剪强度接近20MP。
Effect of bonding conditions on shear strength of joints at 200 °C using Sn-coated Cu particle
As a recent trend, the silicon carbide (SiC) is of particular interest for semiconductor device. The SiC power device provides the possibility to develop the next-generation power conversion circuit with high efficiency and high power density. Compared with the conventional silicon (Si) device, the SiC device can operate with significant lower power loss and higher operating temperature, which contributes to miniaturization and higher performance of power modules. To assemble these power modules, the high temperature packaging technology such as die attach process is needed. As a die attach process, we focus on a solid-state bonding, which can be operated at a low temperatures. However, some drawbacks of this technology still remain. For example, the duration of this process is too long, up to a few hours, and multiple hours of annealing are required to achieve a thermodynamically stable joint. So we are studying on a solid-state bonding using Sn-coated Cu particles to reduce the bonding time. In this study, we evaluated the effect of bonding conditions on the shear strength of Cu/Cu joints at 200 t using a Sn-coated Cu particle paste and investigated a high temperature reliability of the joints. As a result, the average shear strength of Cu/Cu joints under a formic acid atmosphere was around 25 MPa at a bonding time of 20 min. Then, the joints had nearly 20MP shear strength after the isothermal aging at 250 t for 1000 h.