光刻胶模组鉴定程序的开发与优化

J. Thornton, R. Goodner, Ping Wang
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引用次数: 0

摘要

优化了一种鉴定和监测光刻胶模块的新技术。在光刻胶处理前后,对带有蚀刻SRAM图案的测试晶圆进行了检查。使用OSI IQ-165图像化晶圆检测系统进行检测,该系统采用光学模式滤波。该系统能够在不增加检测时间的情况下提高灵敏度。缺陷源分析(KLA 2551)用于识别和绘制光刻胶模块添加的缺陷。将该技术与传统的光刻胶鉴定程序进行了比较,该程序用于评估裸硅片上的光刻胶。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The development and optimization of the photoresist module qualification procedure
A new technique for qualifying and monitoring the photoresist module was optimized. Test wafers with an etched SRAM pattern were inspected before and after photoresist processing. Inspections were performed using an OSI IQ-165 patterned wafer inspection system that employs optical pattern filtering. This system is capable of increasing sensitivity without increasing inspection time. Defect source analysis (KLA 2551) was used to identify and map the defects added by the photoresist module. This technique was compared to the traditional photoresist qualification procedure that evaluates resist patterned on bare silicon wafers.
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