单片100瓦s波段功率放大器，0.25 μm GaN HEMT MMIC技术

2020 15th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2021-01-10 DOI:10.1109/EuMIC48047.2021.00017

G. van der Bent, A. P. de Hek, F. V. van Vliet, Z. Ouarch

{"title":"单片100瓦s波段功率放大器，0.25 μm GaN HEMT MMIC技术","authors":"G. van der Bent, A. P. de Hek, F. V. van Vliet, Z. Ouarch","doi":"10.1109/EuMIC48047.2021.00017","DOIUrl":null,"url":null,"abstract":"A 100 W single chip GaN HPA for radar applications is designed, manufactured and measured. This HPA delivers a peak output power of 107 W at a PAE of more than 55 %. The operational frequency band of the HPA is from 2.9 GHz to 3.4 GHz. High quality non-linear transistor models and advanced simulations of RF performance, amplifier stability and thermal behaviour have led to a first-time-right design.","PeriodicalId":371692,"journal":{"name":"2020 15th European Microwave Integrated Circuits Conference (EuMIC)","volume":"89 5-6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Single-Chip 100-Watt S-band Power Amplifier in 0.25 μm GaN HEMT MMIC Technology\",\"authors\":\"G. van der Bent, A. P. de Hek, F. V. van Vliet, Z. Ouarch\",\"doi\":\"10.1109/EuMIC48047.2021.00017\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 100 W single chip GaN HPA for radar applications is designed, manufactured and measured. This HPA delivers a peak output power of 107 W at a PAE of more than 55 %. The operational frequency band of the HPA is from 2.9 GHz to 3.4 GHz. High quality non-linear transistor models and advanced simulations of RF performance, amplifier stability and thermal behaviour have led to a first-time-right design.\",\"PeriodicalId\":371692,\"journal\":{\"name\":\"2020 15th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"89 5-6\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-01-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 15th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EuMIC48047.2021.00017\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 15th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EuMIC48047.2021.00017","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

设计、制造并测量了用于雷达应用的100w单芯片GaN HPA。该HPA在PAE大于55%时提供107 W的峰值输出功率。HPA的工作频段为2.9 GHz ~ 3.4 GHz。高质量的非线性晶体管模型和射频性能，放大器稳定性和热行为的先进模拟导致了第一次正确的设计。

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Single-Chip 100-Watt S-band Power Amplifier in 0.25 μm GaN HEMT MMIC Technology

A 100 W single chip GaN HPA for radar applications is designed, manufactured and measured. This HPA delivers a peak output power of 107 W at a PAE of more than 55 %. The operational frequency band of the HPA is from 2.9 GHz to 3.4 GHz. High quality non-linear transistor models and advanced simulations of RF performance, amplifier stability and thermal behaviour have led to a first-time-right design.

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2020 15th European Microwave Integrated Circuits Conference (EuMIC)

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