{"title":"一种高速单片GaAs 10/11计数器","authors":"R. Lundgren, D. Snyder, J. Lull","doi":"10.1109/MWSYM.1981.1129926","DOIUrl":null,"url":null,"abstract":"Dual-gate GaAs MESFET logic has been used to develop a monolithic variable-modulus (/spl divide/10//spl divide/11) counter. The circuit incorporates a novel feedback design that will allow the counter to operate up to the maximum speed of its flip-flop components, which have demonstrated cutoff frequencies above 2.5 GHz. The full counter has operated to 1.6 GHz while mounted in a coplanar test fixture. Operation above 2 GHz is expected when a test fixture with reduced crosstalk is used.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A High-Speed Monolithic GaAs 10/11 Counter\",\"authors\":\"R. Lundgren, D. Snyder, J. Lull\",\"doi\":\"10.1109/MWSYM.1981.1129926\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dual-gate GaAs MESFET logic has been used to develop a monolithic variable-modulus (/spl divide/10//spl divide/11) counter. The circuit incorporates a novel feedback design that will allow the counter to operate up to the maximum speed of its flip-flop components, which have demonstrated cutoff frequencies above 2.5 GHz. The full counter has operated to 1.6 GHz while mounted in a coplanar test fixture. Operation above 2 GHz is expected when a test fixture with reduced crosstalk is used.\",\"PeriodicalId\":120372,\"journal\":{\"name\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1981.1129926\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dual-gate GaAs MESFET logic has been used to develop a monolithic variable-modulus (/spl divide/10//spl divide/11) counter. The circuit incorporates a novel feedback design that will allow the counter to operate up to the maximum speed of its flip-flop components, which have demonstrated cutoff frequencies above 2.5 GHz. The full counter has operated to 1.6 GHz while mounted in a coplanar test fixture. Operation above 2 GHz is expected when a test fixture with reduced crosstalk is used.