用于射频系统应用的110ghz大功率光电二极管

2019 IEEE Avionics and Vehicle Fiber-Optics and Photonics Conference (AVFOP) Pub Date : 2019-11-01 DOI:10.1109/avfop.2019.8908216

M. Woodson, S. Estrella, Kenneth A. Hay, R. Stahl, H. Garrett, M. Mashanovitch

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引用次数: 1

摘要

我们提出了一种新型的高速封装光电二极管部件，开发用于1550nm工作，显示110 GHz - 3 db带宽。该器件实现了单行程载波结构，有利于RF模拟链路应用的高功率、高性能操作。

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110 GHz High-Power Photodiode for RF System Applications

We present a novel, high-speed packaged photodiode part, developed for operation at 1550nm, showing 110 GHz −3-dB bandwidth. The device implements a uni-traveling carrier structure which facilitates high-power, high-performance operation for RF analog link applications.

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来源期刊

2019 IEEE Avionics and Vehicle Fiber-Optics and Photonics Conference (AVFOP)

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