MOSFET和高电子迁移率晶体管探测器对太赫兹波灵敏度的定量讨论

2019 7th International Japan-Africa Conference on Electronics, Communications, and Computations, (JAC-ECC) Pub Date : 2019-12-01 DOI:10.1109/JAC-ECC48896.2019.9051237

H. Kojima, H. Kanaya, T. Asano

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引用次数: 0

摘要

提出了一种新的电路模型来描述非准静态条件下由场效应管构成的平方律检测器的检测特性。利用该模型推导的公式计算的传感性能与利用InAs-channel高电子迁移率晶体管(HEMT)检测1.0 THz波的实验结果吻合良好。该模型预测，HEMT对太赫兹波的电压灵敏度比Si MOSFET高得多，即使对于小型化器件也是如此。

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Quantitative Discussion on Sensitivity to Terahertz Waves of Detectors Made of MOSFET and High-Electron Mobility Transistor

A newly developed circuit model is presented to describe detection characteristic of square law detectors made of an FET under non-quasistatic condition. Sensing performance calculated using formulae derived from the model agrees well with results of experiment carried out to detect 1.0 THz waves using InAs-channel high-electron mobility transistor (HEMT). The model predicts that HEMT offers much higher voltage sensitivity to terahertz waves than Si MOSFET even for miniaturized devices.

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来源期刊

2019 7th International Japan-Africa Conference on Electronics, Communications, and Computations, (JAC-ECC)

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