Improving the On-Current of Junctionless Carbon Nanotube Tunneling FETs Using a Heavily n-Type Doped Pocket

In this paper, the on-current of the junctionless carbon nanotube tunnel field-effect transistor is improved using a simple approach based on the use of a heavily n-type doped pocket. This latter is incorporated in the carbon nanotube channel between the auxiliary p-type gate and the control gate. The proposed technique is verified computationally via a quantum simulation approach that solves the computational couple including the Poisson equation solver and the non-equilibrium Green’s function solver. The mode space representation and the ballistic transport conditions are considered. It has been found that the proposed technique is efficient in improving the on-current, off-current, current ratio, subthreshold swing, while keeping the junctionless aspect. In addition, the recorded improvements have been deeply investigated using the relevant band diagrams. The obtained results make the proposed approach as a promising and alternative method, which can be applied to boost other junctionless TFET endowed with auxiliary and the control gates.