多极发射极双极晶体管优化是一种先进的BiCMOS技术

B. Landau, B. Bastani, D. Haueisen, R. Lahri, S. P. Joshi, J. Small
{"title":"多极发射极双极晶体管优化是一种先进的BiCMOS技术","authors":"B. Landau, B. Bastani, D. Haueisen, R. Lahri, S. P. Joshi, J. Small","doi":"10.1109/BIPOL.1988.51060","DOIUrl":null,"url":null,"abstract":"Two approaches involving phosphorus- and arsenic-doped poly emitters for bipolar device optimization in a 1 mu m BiCMOS process are reported. An evaluation includes a comparison of process and device parameters for the two emitter types in the context of a junction-isolated process. The impact of device optimization as measured by ECL and BiCMOS ring oscillators and a BiCMOS 256 K SRAM is discussed. Finally, the reliability of phosphorus and arsenic poly emitters, in terms of beta degradation due to reverse biasing of the emitter-base junction, is presented.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"177 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Poly emitter bipolar transistor optimization for an advanced BiCMOS technology\",\"authors\":\"B. Landau, B. Bastani, D. Haueisen, R. Lahri, S. P. Joshi, J. Small\",\"doi\":\"10.1109/BIPOL.1988.51060\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two approaches involving phosphorus- and arsenic-doped poly emitters for bipolar device optimization in a 1 mu m BiCMOS process are reported. An evaluation includes a comparison of process and device parameters for the two emitter types in the context of a junction-isolated process. The impact of device optimization as measured by ECL and BiCMOS ring oscillators and a BiCMOS 256 K SRAM is discussed. Finally, the reliability of phosphorus and arsenic poly emitters, in terms of beta degradation due to reverse biasing of the emitter-base junction, is presented.<<ETX>>\",\"PeriodicalId\":302949,\"journal\":{\"name\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"volume\":\"177 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1988.51060\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51060","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

本文报道了在1 μ m BiCMOS工艺中采用磷和砷掺杂多发射体对双极器件进行优化的两种方法。评估包括在连接隔离工艺的背景下对两种发射器类型的工艺和器件参数进行比较。讨论了ECL和BiCMOS环形振荡器以及BiCMOS 256k SRAM测量的器件优化的影响。最后,磷和砷多发射体的可靠性,在β降解方面,由于反向偏置的发射极-基结,提出
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Poly emitter bipolar transistor optimization for an advanced BiCMOS technology
Two approaches involving phosphorus- and arsenic-doped poly emitters for bipolar device optimization in a 1 mu m BiCMOS process are reported. An evaluation includes a comparison of process and device parameters for the two emitter types in the context of a junction-isolated process. The impact of device optimization as measured by ECL and BiCMOS ring oscillators and a BiCMOS 256 K SRAM is discussed. Finally, the reliability of phosphorus and arsenic poly emitters, in terms of beta degradation due to reverse biasing of the emitter-base junction, is presented.<>
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信