基于PZT的PiezoMEMS器件的制备

Sudhanshu Tiwari, Randhir Kumar, Ajay Dangi, R. Pratap
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引用次数: 9

摘要

我们报道了一种以锆钛酸铅薄膜为活性压电材料制备压电微压电器件的稳健工艺流程。该工艺流程可以克服在共享设备中加工PZT薄膜的所有污染问题。我们使用湿蚀刻配方蚀刻底部电极(铂)和PZT。我们建议在DRIE中进行深度硅蚀刻时覆盖PZT和Pt薄膜的侧壁,以避免这些污染材料可能暴露在工具上。利用这一工艺,我们制作了一种静电梳状驱动和压电传感的陀螺仪结构。在梁上使用PZT薄膜对结构进行了驱动测试,以验证有源层的完整性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enabling Fabrication of PZT Based PiezoMEMS Devices
We report a robust process flow for fabrication of PiezoMEMS devices with Lead Zirconate Titanate thin film as the active piezoelectric material. This process flow can overcome all contamination issues that plague processing PZT thin films in a shared facility. We use wet etch recipes for etching of the bottom electrode (platinum) and PZT. We propose sidewall coverage of PZT and Pt film while carrying out deep silicon etch in DRIE to avoid possible exposure of these contaminating materials to the tool. With this process, we have fabricated a gyroscope structure with electrostatic comb drive actuation and piezoelectric sensing. The structure is tested for actuation using PZT film on the beam just to verify the integrity of the active layer.
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