{"title":"20gb /s光接收器,集成40纳米CMOS光检测器","authors":"Shih-Hao Huang, Wei-Zen Chen","doi":"10.1109/ASSCC.2013.6691023","DOIUrl":null,"url":null,"abstract":"This paper presents a 20-Gb/s monolithically integrated CMOS optical receiver, integrating a photo detector, a transimpedance amplifier, and a post limiting amplifier on a single chip. Incorporating a 2-D meshed spatially-modulated light detector, the optical receiver achieves a record-high speed and is capable of delivering 80-dBΩ conversion gain when driving 50-Ω output loads. Nested-feedback topologies are adopted for transimpedance and post limiting amplifier design to achieve broad-band and high-gain operations without shunt-peaking inductors. Implemented in a generic 40-nm CMOS technology, the chip size is 0.6 × 0.54 mm. This receiver core drains 30 mW from 1-V supply.","PeriodicalId":296544,"journal":{"name":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A 20-Gb/s optical receiver with integrated photo detector in 40-nm CMOS\",\"authors\":\"Shih-Hao Huang, Wei-Zen Chen\",\"doi\":\"10.1109/ASSCC.2013.6691023\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 20-Gb/s monolithically integrated CMOS optical receiver, integrating a photo detector, a transimpedance amplifier, and a post limiting amplifier on a single chip. Incorporating a 2-D meshed spatially-modulated light detector, the optical receiver achieves a record-high speed and is capable of delivering 80-dBΩ conversion gain when driving 50-Ω output loads. Nested-feedback topologies are adopted for transimpedance and post limiting amplifier design to achieve broad-band and high-gain operations without shunt-peaking inductors. Implemented in a generic 40-nm CMOS technology, the chip size is 0.6 × 0.54 mm. This receiver core drains 30 mW from 1-V supply.\",\"PeriodicalId\":296544,\"journal\":{\"name\":\"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2013.6691023\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2013.6691023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 20-Gb/s optical receiver with integrated photo detector in 40-nm CMOS
This paper presents a 20-Gb/s monolithically integrated CMOS optical receiver, integrating a photo detector, a transimpedance amplifier, and a post limiting amplifier on a single chip. Incorporating a 2-D meshed spatially-modulated light detector, the optical receiver achieves a record-high speed and is capable of delivering 80-dBΩ conversion gain when driving 50-Ω output loads. Nested-feedback topologies are adopted for transimpedance and post limiting amplifier design to achieve broad-band and high-gain operations without shunt-peaking inductors. Implemented in a generic 40-nm CMOS technology, the chip size is 0.6 × 0.54 mm. This receiver core drains 30 mW from 1-V supply.