用于超低功耗VLSI的硅化超薄冲击电离MOS (SUTIMOS)

2021 International Conference on Control, Automation, Power and Signal Processing (CAPS) Pub Date : 2021-12-10 DOI:10.1109/CAPS52117.2021.9730672

Ankit Dixit, Rajeewa Kumar Jaisawal, Sunil Rathore, Suneet Kumar Agnihotri, P. Kondekar

{"title":"用于超低功耗VLSI的硅化超薄冲击电离MOS (SUTIMOS)","authors":"Ankit Dixit, Rajeewa Kumar Jaisawal, Sunil Rathore, Suneet Kumar Agnihotri, P. Kondekar","doi":"10.1109/CAPS52117.2021.9730672","DOIUrl":null,"url":null,"abstract":"In this article, Impact Ionization Metal Oxide Semiconductor (IMOS) device is investigated with silicide source material. A comparatively study of Silicide Ultrathin Impact Ionization MOS (SUTIMOS), with conventional IMOS and earlier proposed UTIMOS was also done based on the device parameters such as electric field, impact ionization rate, band diagram, and the current density. Effect of the schottky height of silicide material was also performed on the transfer and output characteristic of the device. All the study has been performed on the sentaurus 2D device simulator TCAD tool.","PeriodicalId":445427,"journal":{"name":"2021 International Conference on Control, Automation, Power and Signal Processing (CAPS)","volume":"29 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application\",\"authors\":\"Ankit Dixit, Rajeewa Kumar Jaisawal, Sunil Rathore, Suneet Kumar Agnihotri, P. Kondekar\",\"doi\":\"10.1109/CAPS52117.2021.9730672\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, Impact Ionization Metal Oxide Semiconductor (IMOS) device is investigated with silicide source material. A comparatively study of Silicide Ultrathin Impact Ionization MOS (SUTIMOS), with conventional IMOS and earlier proposed UTIMOS was also done based on the device parameters such as electric field, impact ionization rate, band diagram, and the current density. Effect of the schottky height of silicide material was also performed on the transfer and output characteristic of the device. All the study has been performed on the sentaurus 2D device simulator TCAD tool.\",\"PeriodicalId\":445427,\"journal\":{\"name\":\"2021 International Conference on Control, Automation, Power and Signal Processing (CAPS)\",\"volume\":\"29 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on Control, Automation, Power and Signal Processing (CAPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAPS52117.2021.9730672\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Control, Automation, Power and Signal Processing (CAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAPS52117.2021.9730672","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文研究了以硅化物为源材料的冲击电离金属氧化物半导体(IMOS)器件。基于电场、冲击电离率、能带图、电流密度等器件参数，对硅化超薄冲击电离MOS (SUTIMOS)与传统的冲击电离MOS和早期提出的UTIMOS进行了对比研究。研究了硅化材料的肖特基高度对器件的传递和输出特性的影响。所有的研究都是在sentaurus 2D设备模拟器TCAD工具上进行的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application

In this article, Impact Ionization Metal Oxide Semiconductor (IMOS) device is investigated with silicide source material. A comparatively study of Silicide Ultrathin Impact Ionization MOS (SUTIMOS), with conventional IMOS and earlier proposed UTIMOS was also done based on the device parameters such as electric field, impact ionization rate, band diagram, and the current density. Effect of the schottky height of silicide material was also performed on the transfer and output characteristic of the device. All the study has been performed on the sentaurus 2D device simulator TCAD tool.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2021 International Conference on Control, Automation, Power and Signal Processing (CAPS)

自引率

0.00%

发文量