单片表面微机械集成陀螺仪与50/spl度//小时根艾伦方差

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI:10.1109/ISSCC.2002.992288

J. Geen, S. Sherman, J. F. Chang, S. R. Lewis

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引用次数: 50

摘要

采用3/spl mu/m BiCMOS工艺的MEMS表面微机械陀螺仪集成在单个3/spl倍/3 mm/sup / 2/芯片上，具有4 /spl mu/m厚度的多晶硅结构，5V 6 mA电源，0.05/spl度//spl半径/s点噪声，12.5 mV//spl度//s， >30,000 g冲击存活，工作范围为-55至85/spl度/C。

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Single-chip surface-micromachined integrated gyroscope with 50/spl deg//hour root Allan variance

A MEMS surface-micromachined gyroscope integrated on a single 3/spl times/3 mm/sup 2/ chip with a 3 /spl mu/m BiCMOS process has 4 /spl mu/m-thick polysilicon structure, 5V 6 mA power supply, 0.05/spl deg///spl radic/s spot noise, 12.5 mV//spl deg//s, >30,000 g shock survival, and -55 to 85/spl deg/C operating range.

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来源期刊

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)

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