使用不同低功耗技术的FFT/IFFT设计的比较

Kwen-Siong Chong, J. Chang, I. Ebong, Y. Yilmaz, P. Mazumder
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引用次数: 1

摘要

多年来,人们一直在研究CMOS电路中不同的节能技术。本文比较了128点FFT处理器中的异步方法、超阈值方法和亚阈值方法。亚阈值设计采用台积电65nm技术,采用4kb SRAM和8T单元电池。在亚阈值状态下操作的8T单元的大小要求作为静态写入距的函数进行了探讨。亚阈值处理器运行在1 MHz,能耗为31 nJ/FFT。亚阈值方法被认为是三种方法中最节能的低功耗方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparison of FFT/IFFT Designs Utilizing Different Low Power Techniques
Different techniques of power savings in CMOS circuits have been investigated through the years. This work compares the asynchronous approach, the superthreshold approach, and the subthreshold approach in a 128 point FFT processor. The subthreshold design, made in TSMC 65 nm technology, utilizes a 4 kb SRAM with 8T unit cells. The sizing requirements for the 8T cell operated in subthreshold regime is explored as a function of static write margin. The subthreshold processor runs at 1 MHz with an energy consumption of 31 nJ/FFT. Subthreshold approach is seen to be the most energy efficient low power method of the three approaches.
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