片上可调谐宽量程多输出电压基准

G. Kapur, C. Markan, V. Pyara
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引用次数: 1

摘要

提出了一种基于非易失性高精度现场可编程浮栅晶体管的片上可调谐宽范围多输出CMOS基准电压。参考装备为低于1V和高于1V的应用。电路设计包括基本的倍增器配置,并提供了将电流源电路和基准产生电路作为独立单元的策略。采用T-Spice 0.35μm CMOS工艺建立了该电路的仿真模型。仿真结果表明,在大范围的热条件下,温度不灵敏度很高。在-40 ~ 140℃的宽温度范围内,参考电压变化约为1.65mV/°C ~ 1.67mV/°C;具有令人印象深刻的静态电源依赖125μV/V,参考电压为280mV。该电路也可以在非常低的电源电压(0.5v)下工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On-chip tunable wide ranged multiple output voltage reference
We presents an on-chip tunable wide ranged multiple output CMOS voltage reference based on non-volatile highly precise field programmable floating gate transistors. The reference is outfit for both sub 1V and above 1V applications. The circuit design consists of basic beta multiplier configuration and offers a strategy of making the current sourcing circuit and reference generating circuit as independent units. A simulation model of the circuit was built in T-Spice, 0.35μm CMOS process. Simulation results show high amount of temperature insensitivity for a large range of thermal conditions. The reference voltage variation is about 1.65mV/°C to 1.67mV/°C over wide temperature range of -40 to 140°C; has an impressive static supply dependency of 125μV/V for a reference of 280mV. The circuit can also be operated at very low supply voltage (0.5v).
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