非晶SiGe在Si(100)衬底固相外延生长的观察

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496425

W. Qi, B. Li, G. Jiang, Z. Gu, T. Kwok, R.J. Zhang, P. Chu

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引用次数: 0

摘要

本文研究了非晶SiGe在Si(100)衬底上的固相异质外延生长。实验结果表明，不同成分的异质结构Si/sub - 1-x/Ge/sub -x/ Si均可通过硼扩散、退火和氧化等高温热处理工艺实现固相外延。

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Observation of solid phase epitaxial growth of amorphous SiGe on Si(100) substrate

The solid phase hetero-epitaxial growth of amorphous SiGe on Si(100) substrate has been investigated in this paper. The experimental results indicate that the solid phase epitaxy of the heterostructure Si/sub 1-x/Ge/sub x//Si can be achieved with different compositions through high temperature thermal processes such as boron diffusion, annealing and oxidation.

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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