未掺杂algan /GaN/蓝宝石HEMT氢气传感器的传感性能

2008 Second Asia International Conference on Modelling & Simulation (AMS) Pub Date : 2008-05-13 DOI:10.1109/AMS.2008.184

M. Mohamad, Fong Yee Meng, A. M. Hashim

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引用次数: 1

摘要

系统地研究了未掺杂的AlGaN/GaN/蓝宝石圆形肖特基二极管在较宽的氢浓度和温度范围内的氢传感特性。将高纯度氢气与环境气体(空气或纯氮)或无环境气体(真空)一起暴露在样品中，压力范围为50托至200托。研究了不同氢浓度下的传感特性。研究了催化剂对氢气的敏感性与不同金属厚度和操作温度的关系。

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The Sensing Performance of Undoped-AlGaN/GaN/Sapphire HEMT Hydrogen Gas Sensor

The hydrogen sensing characteristics of undoped- AlGaN/GaN/sapphire circular Schottky diodes are systematically studied and compared over wide hydrogen concentration and temperature ranges. High purity hydrogen gas was exposed to the sample together with the ambient gas of either air or pure nitrogen or without ambient gas (vacuum) at pressure in the range of 50 Torr to 200 Torr was used for both types of ambient gases. The sensing characteristics at different hydrogen concentration are investigated. The sensitivity to hydrogen gas was also investigated in dependence of various catalytic metals thickness and operating temperatures.

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2008 Second Asia International Conference on Modelling & Simulation (AMS)

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