硅基多电平单片三维电感

Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257) Pub Date : 2001-08-14 DOI:10.1109/MWSCAS.2001.986321

Ju-Ho Son, Sun-Hong Kim, S. Choi, DoHwan Rho, Dong-Yong Kim

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引用次数: 5

摘要

本文对硅射频和微波中的无源器件进行了分析。介绍了采用标准CMOS技术实现的多电平单片三维电感器。由于片上电感器被限制在平面上，典型的解决方案是形成螺旋形。提出的电感器由三维结构组成，不需要额外的加工步骤。除增加自感外，增加互感的电感也更高。由于这个原因，这种结构产生了质量因子Q和在小区域内使用3D几何形状的电感。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Multilevel monolithic 3D inductors on silicon

This paper has been the analysis of passive devices in Si RF and microwave. Multilevel monolithic 3D inductors implemented in a standard CMOS technology are presented. Since on-chip inductors are constrained to be planar, the typical solution is to form a spiral. Proposed inductors are composed of 3D structures requiring no extra processing steps. Inductances are higher in increasing the mutual inductance besides the self-inductance. In this reason, this structure gives rise to a quality factor Q and a inductance using 3D geometry in small areas.

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Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257)

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