工艺变化下FinFET技术缩放对关键路径性能的影响

5th International Conference on Energy Aware Computing Systems & Applications Pub Date : 2015-03-24 DOI:10.1109/ICEAC.2015.7352194

Osama Abdelkader, H. Mostafa, H. A. Elhamid, A. Soliman

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引用次数: 4

摘要

比较了基于FinFET的环形振荡器(RO)的指标，从20nm到7nm的技术缩放进行了评估。模拟基于亚利桑那州立大学开发的预测技术模型(PTM)。报告了工艺和温度变化对频率、功率和功率延迟积的影响。RO的性能和功耗随着技术的扩展而提高，但在14nm技术之后性能下降。

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The impact of FinFET technology scaling on critical path performance under process variations

Comparisons of FinFET based ring oscillator (RO) metrics are evaluated with technology scaling from 20nm to 7nm technology. Simulations are based on predictive technology models (PTM) developed by Arizona state university. The impact of process and temperature variations on frequency, power, and power delay product is reported. Performance and power of the RO are improved with technology scaling, however performance is degraded after 14nm technology.

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5th International Conference on Energy Aware Computing Systems & Applications

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