Multi field SRAM access via intra-encoders and crossbar addressing scheme

In this work, a novel architecture that simultaneously accesses multiple and non-overlapped sub-regions of a static random access memory, is presented. The selection of the multi memory fields is succeeded via intra-encoders, placed one for every memory field. The addressing of the memory is done using a modified approach of the crossbar addressing scheme. At the presented implementation, each memory field comprises of 8 by 8 memory cell sectors. However, using the same design guidelines, memories and memory fields of bigger size, can be easily created. Each memory cell uses an 8T model. At the end, simulation results are presented, which verify the successful multi field access of the memory.