Performance analysis of doped multi-layer graphene nanoribbon (MLGNR) interconnects at deep sub-micron nodes

With technology, shrinking towards deep sub-micron Multi-layer GNR (Graphene Nanoribbons) has become evolving choice for the use of interconnects, as technology is moving towards deep submicron dimensions. This is due to the various superior capabilities, which includes large current carrying capacity, very high conductivity and strength. The performance of doped multilayer GNR is far better than neutral GNR for global line. It has been seen Fermi energy increases with suitable addition of dopant atoms. Therefore, doping has a direct impact on Fermi energy and can cause reduction in parasitic components present in interconnects. Dependence of propagation delay and Power Delay Product (PDP) on Fermi energy is analyzed. With insertion of suitable repeaters, the performance of doped multi-layer graphene nanoribbon is studied for varying technology nodes. It is observed that doped multilayer MLGNR with proper Fermi energy at global lengths can outperform and replace copper interconnects.