{"title":"1/4英寸QVGA彩色成像和3-D传感CMOS传感器与模拟帧存储器","authors":"T. Sugiyama, S. Yoshimura, R. Suzuki, H. Sumi","doi":"10.1109/ISSCC.2002.992292","DOIUrl":null,"url":null,"abstract":"A 320/spl times/240 color imaging CMOS sensor with a current-copier cell array and comparators for column-parallel processing accomplishes video rate depth acquisition. The sensor dissipates 82 mW for 3.3kframe/s 3-D sensing with 2.5 mm depth resolution, and 36 mW for 30frames/s imaging with a single CDS circuit for FPN reduction at 3.3 V.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":"{\"title\":\"A 1/4-inch QVGA color imaging and 3-D sensing CMOS sensor with analog frame memory\",\"authors\":\"T. Sugiyama, S. Yoshimura, R. Suzuki, H. Sumi\",\"doi\":\"10.1109/ISSCC.2002.992292\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 320/spl times/240 color imaging CMOS sensor with a current-copier cell array and comparators for column-parallel processing accomplishes video rate depth acquisition. The sensor dissipates 82 mW for 3.3kframe/s 3-D sensing with 2.5 mm depth resolution, and 36 mW for 30frames/s imaging with a single CDS circuit for FPN reduction at 3.3 V.\",\"PeriodicalId\":423674,\"journal\":{\"name\":\"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"33\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2002.992292\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2002.992292","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1/4-inch QVGA color imaging and 3-D sensing CMOS sensor with analog frame memory
A 320/spl times/240 color imaging CMOS sensor with a current-copier cell array and comparators for column-parallel processing accomplishes video rate depth acquisition. The sensor dissipates 82 mW for 3.3kframe/s 3-D sensing with 2.5 mm depth resolution, and 36 mW for 30frames/s imaging with a single CDS circuit for FPN reduction at 3.3 V.