A. Metzger, C.E. Chang, P. Asbeck, K. Wang, K. Pedrotti, A. Price, A. Campana, D. Wu, J. Liu, S. Beccue
{"title":"采用AlGaAs/GaAs异质结双极晶体管实现的10gb /s 12x12交叉点开关","authors":"A. Metzger, C.E. Chang, P. Asbeck, K. Wang, K. Pedrotti, A. Price, A. Campana, D. Wu, J. Liu, S. Beccue","doi":"10.1109/GAAS.1997.628249","DOIUrl":null,"url":null,"abstract":"A 12x12 cross-point switch is reported which operates with data rate per channel of 10 Gb/s. The aggregate data rate for the switch, 120 Gb/s, is one of the highest of any reported IC. The circuit is based on AlGaAs/GaAs HBT technology and employs a double switching architecture to minimize jitter. An rms jitter below 4 psec has been demonstrated.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"220 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A 10 Gb/s 12x12 cross-point switch implemented with AlGaAs/GaAs heterojunction bipolar transistors\",\"authors\":\"A. Metzger, C.E. Chang, P. Asbeck, K. Wang, K. Pedrotti, A. Price, A. Campana, D. Wu, J. Liu, S. Beccue\",\"doi\":\"10.1109/GAAS.1997.628249\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 12x12 cross-point switch is reported which operates with data rate per channel of 10 Gb/s. The aggregate data rate for the switch, 120 Gb/s, is one of the highest of any reported IC. The circuit is based on AlGaAs/GaAs HBT technology and employs a double switching architecture to minimize jitter. An rms jitter below 4 psec has been demonstrated.\",\"PeriodicalId\":299287,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"volume\":\"220 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1997.628249\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1997.628249","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 10 Gb/s 12x12 cross-point switch implemented with AlGaAs/GaAs heterojunction bipolar transistors
A 12x12 cross-point switch is reported which operates with data rate per channel of 10 Gb/s. The aggregate data rate for the switch, 120 Gb/s, is one of the highest of any reported IC. The circuit is based on AlGaAs/GaAs HBT technology and employs a double switching architecture to minimize jitter. An rms jitter below 4 psec has been demonstrated.