逆变器用功率半导体器件的功率损耗和结温研究

Proceedings of the IEEE International Vehicle Electronics Conference (IVEC'99) (Cat. No.99EX257) Pub Date : 1999-09-06 DOI:10.1109/IVEC.1999.830658

S. Azuma, M. Kimata, M. Seto, Xinjian Jiang, H. Lu, D. Xu, Lipei Huang

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引用次数: 19

摘要

提出了一种估算逆变器中IGBT和二极管器件的功率损耗和工作温度的新方法。该方法基于不同工况下IGBT暂态和稳态特性的测量数据，结合实际系统的热等效网络模型。最后，对由逆变器和永磁同步电机组成的驱动系统进行了实验研究。结果表明，该计算程序对逆变器的热设计是非常有效的。

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Research on the power loss and junction temperature of power semiconductor devices for inverter

A new calculation method to estimate the power loss and the working temperature of IGBT and diode devices in an inverter is presented. This method is based on the measurement data of the IGBT's transient and steady state characteristics under different conditions and the thermal equivalent network model of the actual system. Finally, an experiment of a drive system including an inverter and a permanent magnet synchronous motor was done. The result shows that the calculation program is very effective for the thermal design of inverters.

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Proceedings of the IEEE International Vehicle Electronics Conference (IVEC'99) (Cat. No.99EX257)

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