采用衬底偏置等离子体刻蚀技术制备纳米尺度磁性隧道结

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005. Pub Date : 2005-10-17 DOI:10.1109/INTMAG.2005.1464424

K. lee, J.Y. Chang, S.H. Han, K. Shin, W. Lee

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引用次数: 0

摘要

SiO/sub 2//Ta(50 /spl Aring/)/Ni/sub 81/Fe/sub 19/(60 /spl Aring/)/Fe/sub 50/Mn/sub 50/(80 /spl Aring/)/FM/sub BOTTOM/(40 /spl Aring/)/Al/sub 2/O/sub 3/(12-16 /spl Aring/)/FM/sub TOP/(100 /spl Aring/)/Ta(20 /spl Aring/)在热氧化Si(100)衬底上制备。调频层采用Ni/sub 81/Fe/sub 19/或Co/sub 84/Fe/sub 16/。研究了基片偏置等离子体刻蚀工艺对磁性隧道结中磁输运特性的影响，并与传统方法制备的器件进行了比较。研究了MTJs的TMR比、结电阻、磁化开关行为等性能。

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Nanometer scaled magnetic tunnel junctions fabricated by a substrate biased plasma etching technique

SiO/sub 2//Ta(50 /spl Aring/)/Ni/sub 81/Fe/sub 19/(60 /spl Aring/)/Fe/sub 50/Mn/sub 50/(80 /spl Aring/)/FM/sub BOTTOM/(40 /spl Aring/)/Al/sub 2/O/sub 3/(12-16 /spl Aring/)/FM/sub TOP/(100 /spl Aring/)/Ta(20 /spl Aring/) are prepared on a thermally oxidized Si(100) substrate. FM layer used is Ni/sub 81/Fe/sub 19/ or Co/sub 84/Fe/sub 16/. The effect of substrate-biased plasma etching process on magnetotransport properties in magnetic tunnel junctions compared to that of the device prepared by a conventional way is investigated. Several properties such as TMR ratio and junction resistance, magnetization switching behavior of the MTJs are also investigated.

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INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.

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