{"title":"低噪声放大器设计中宽温度范围mosfet参数和伏安特性的建模","authors":"A. Pilipenko, V. Biryukov","doi":"10.1109/EWDTS.2014.7027065","DOIUrl":null,"url":null,"abstract":"The temperature dependencies of the basic parameters of MOSFETs in a temperature range 20 - 300 K are measured. The universal formal four-parametric model, which allows to approximate all experimental temperature dependencies with the relative error less than 1% is proposed. The hybrid analytical model efficiency for approximation of volt-ampere characteristics of MOSFETs is proved.","PeriodicalId":272780,"journal":{"name":"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)","volume":"403 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Modeling of MOSFETs parameters and volt-ampere characteristics in a wide temperature range for low noise amplifiers design\",\"authors\":\"A. Pilipenko, V. Biryukov\",\"doi\":\"10.1109/EWDTS.2014.7027065\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The temperature dependencies of the basic parameters of MOSFETs in a temperature range 20 - 300 K are measured. The universal formal four-parametric model, which allows to approximate all experimental temperature dependencies with the relative error less than 1% is proposed. The hybrid analytical model efficiency for approximation of volt-ampere characteristics of MOSFETs is proved.\",\"PeriodicalId\":272780,\"journal\":{\"name\":\"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)\",\"volume\":\"403 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EWDTS.2014.7027065\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EWDTS.2014.7027065","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of MOSFETs parameters and volt-ampere characteristics in a wide temperature range for low noise amplifiers design
The temperature dependencies of the basic parameters of MOSFETs in a temperature range 20 - 300 K are measured. The universal formal four-parametric model, which allows to approximate all experimental temperature dependencies with the relative error less than 1% is proposed. The hybrid analytical model efficiency for approximation of volt-ampere characteristics of MOSFETs is proved.