砷化镓x波段薄膜声滤波器

1992 IEEE Microwave Symposium Digest MTT-S Pub Date : 1992-06-01 DOI:10.1109/MWSYM.1992.187933

R. Stokes, J. D. Crawford

{"title":"砷化镓x波段薄膜声滤波器","authors":"R. Stokes, J. D. Crawford","doi":"10.1109/MWSYM.1992.187933","DOIUrl":null,"url":null,"abstract":"The semiconductor bulk acoustic resonator (SBAR) is composed entirely of thin films, piezoelectric aluminum nitride, and metal electrode films (primarily aluminum). The authors describe the performance of an SBAR filter which has only 6.1 dB insertion loss at 7.8 GHz (2nd harmonic) and 7.5 dB insertion loss at 11.6 GHz (third harmonic), with fractional bandwidths less than 1%. This filter demonstrates that SBAR technology is practical for X-band filters in MMICs (monolithic microwave integrated circuits).<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"50","resultStr":"{\"title\":\"X-band thin film acoustic filters on GaAs\",\"authors\":\"R. Stokes, J. D. Crawford\",\"doi\":\"10.1109/MWSYM.1992.187933\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The semiconductor bulk acoustic resonator (SBAR) is composed entirely of thin films, piezoelectric aluminum nitride, and metal electrode films (primarily aluminum). The authors describe the performance of an SBAR filter which has only 6.1 dB insertion loss at 7.8 GHz (2nd harmonic) and 7.5 dB insertion loss at 11.6 GHz (third harmonic), with fractional bandwidths less than 1%. This filter demonstrates that SBAR technology is practical for X-band filters in MMICs (monolithic microwave integrated circuits).<<ETX>>\",\"PeriodicalId\":165665,\"journal\":{\"name\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"50\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1992.187933\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.187933","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 50

摘要

半导体体声谐振器(SBAR)完全由薄膜、压电氮化铝和金属电极膜(主要是铝)组成。作者描述了一种SBAR滤波器的性能，该滤波器在7.8 GHz(二谐波)时的插入损耗只有6.1 dB，在11.6 GHz(三谐波)时的插入损耗只有7.5 dB，分数带宽小于1%。该滤波器表明，SBAR技术是实用的x波段滤波器在mmic(单片微波集成电路)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

X-band thin film acoustic filters on GaAs

The semiconductor bulk acoustic resonator (SBAR) is composed entirely of thin films, piezoelectric aluminum nitride, and metal electrode films (primarily aluminum). The authors describe the performance of an SBAR filter which has only 6.1 dB insertion loss at 7.8 GHz (2nd harmonic) and 7.5 dB insertion loss at 11.6 GHz (third harmonic), with fractional bandwidths less than 1%. This filter demonstrates that SBAR technology is practical for X-band filters in MMICs (monolithic microwave integrated circuits).<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1992 IEEE Microwave Symposium Digest MTT-S

自引率

0.00%

发文量