Xin Xu, P. V. Testa, Songhui Li, László Szilágyi, W. Finger, C. Carta, F. Ellinger
{"title":"用于5G无线系统的22 nm FD-SOI CMOS 21-39.5 GHz功率放大器","authors":"Xin Xu, P. V. Testa, Songhui Li, László Szilágyi, W. Finger, C. Carta, F. Ellinger","doi":"10.1109/APMC46564.2019.9038202","DOIUrl":null,"url":null,"abstract":"This paper presents a high-gain broadband power amplifier for 5G wireless systems, which provides a gain above 10 dB from 21 GHz to 39.5 GHz, and is implemented in a 22 nm FD-SOI technology. The circuit is based on two stacked amplifier stages which are connected with lumped-element matching networks. For a power consumption of 228 mW from a 2.4 V voltage supply, the amplifier provides 25 dB of peak gain, maximum saturated output power of 16.8 dBm, output power in 1 dB gain-compression of 13 dBm, and maximum power-added-efficiency of 19.8%. The power amplifier compares well against previously reported designs by showing the highest measured gain and gain-bandwidth product while still having comparable performance in the other figures of merit.","PeriodicalId":162908,"journal":{"name":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 21-39.5 GHz Power Amplifier for 5G Wireless Systems in 22 nm FD-SOI CMOS\",\"authors\":\"Xin Xu, P. V. Testa, Songhui Li, László Szilágyi, W. Finger, C. Carta, F. Ellinger\",\"doi\":\"10.1109/APMC46564.2019.9038202\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a high-gain broadband power amplifier for 5G wireless systems, which provides a gain above 10 dB from 21 GHz to 39.5 GHz, and is implemented in a 22 nm FD-SOI technology. The circuit is based on two stacked amplifier stages which are connected with lumped-element matching networks. For a power consumption of 228 mW from a 2.4 V voltage supply, the amplifier provides 25 dB of peak gain, maximum saturated output power of 16.8 dBm, output power in 1 dB gain-compression of 13 dBm, and maximum power-added-efficiency of 19.8%. The power amplifier compares well against previously reported designs by showing the highest measured gain and gain-bandwidth product while still having comparable performance in the other figures of merit.\",\"PeriodicalId\":162908,\"journal\":{\"name\":\"2019 IEEE Asia-Pacific Microwave Conference (APMC)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE Asia-Pacific Microwave Conference (APMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APMC46564.2019.9038202\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APMC46564.2019.9038202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 21-39.5 GHz Power Amplifier for 5G Wireless Systems in 22 nm FD-SOI CMOS
This paper presents a high-gain broadband power amplifier for 5G wireless systems, which provides a gain above 10 dB from 21 GHz to 39.5 GHz, and is implemented in a 22 nm FD-SOI technology. The circuit is based on two stacked amplifier stages which are connected with lumped-element matching networks. For a power consumption of 228 mW from a 2.4 V voltage supply, the amplifier provides 25 dB of peak gain, maximum saturated output power of 16.8 dBm, output power in 1 dB gain-compression of 13 dBm, and maximum power-added-efficiency of 19.8%. The power amplifier compares well against previously reported designs by showing the highest measured gain and gain-bandwidth product while still having comparable performance in the other figures of merit.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
